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Infineon Technologies Austria - Wikipedia
Infineon Technologies Austria is a group subsidiary of Infineon Technologies.It employs 3785 people in around 60 countries with a large proportion in research (over 1500). In 2017 the company made a turnover of €2.5 billion. Its headquarters are in Villach, Austria.
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Silicon Carbide by Anyang Kangxin Metallurgy Furnace …
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since 1893 for use as an abrasive.
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Silicon Carbide UV Photodiodes from sglux SiC Photodiodes with up to 36mm² active area Since 2009 sglux produces SiC based UV photodiode chips with active areas from 0.06 mm² to 36 mm², SiC quadrant photodiodes and SiC spectrometer modules. SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high …
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US5233215A - Silicon carbide power MOSFET with …
A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon
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Global Silicon Carbide Market Research Report 2019
Silicon carbide can be used form very hard ceramics that are widely used in appliions requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic appliions of silicon carbide as light-emitting diodes (LEDs) and
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Final Report Summary - SPEED (Silicon Carbide Power …
• C. Bödeker, T. Vogt, and N. Kaminski, “Investigation of the Thermal Runaway of Silicon Carbide Diodes during Blocking Operation,” in proceedings of 15th European Conference on Power Electronics and Appliions (EPE), Geneva, Switzerland, 2015.
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Silicon Carbide Schottky Diodes SiC Schottky diodes have essentially no reverse recovery current, and the minimal amount of capacitive current present in turn-off is independent from temperature, forward current, and di/dt. This results in virtually no switching losses
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An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in
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Silicon Carbide (SiC) ideal material for Armor, military …
Silicon carbide, also known as carborundum, is a unique compound of carbon and silicon and is one of the hardest available materials. Characteristics such as relatively low thermal expansion, high force-to-weight radius, high thermal conductivity, hardness
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Wide Bandgap Power Electronics Technology Assessment
13/2/2015· 127 Villach, Austria, and ree Technologies’ in Durham, North aro lina. In 2010 silicon carbide power 128 electronics was manufactured primarily in Europe (54%), the United States (41%), and Japan (2%) (Yole 129 Developpement, 2012). The distribution of
Electric vehicles: Considering silicon carbide over silicon …
Silicon vs. silicon carbide transistors Silicon semiconductor insulated-gate bipolar transistors (IGBT) have long been paired with flyback diodes in industrial traction drives, voltage inverters and power transmission devices. For electric mobility companies,
US6107142A - Self-aligned methods of fabriing silicon …
Silicon carbide power devices are fabried by implanting p-type dopants into a silicon carbide substrate through an opening in a mask, to form a deep p-type implant. N-type dopants are implanted into the silicon carbide substrates through the same opening in the