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of the 27th Session of the CIE. South Africa 2011: Sun City, South Africa, 10 - 15 July PERNÝ, M. - ŠÁLY, V. - HURAN, J.: Electric and Dielectric Properties of Amorphous Silicon Carbide Thin Films Produced at High

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TI - “Silicon millefeuille”: from a silicon wafer to multiple thin crystalline films in a single step ER - TY - CONF AU - Roca, J. AU - Beltran, L. T3 - International Conference on Virtual Cities and Territories PY - 2011 Y1 - 2011 SP - 257 EP - 260 PB - Department of

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The blue LEDs could be developed based on GaN (gallium nitride), SiC (silicon carbide) and ZnSe (zinc selenide) because of the width of their band gaps. Nevertheless, SiC was not a good candidate because of its indirect band gap and ZnSe blue LEDs were developed, but not commercially available because of their short life span.

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----- \\ arXiv:0810.0003 From: Anais Rassat >anais.rassat(at)cea.fr Date: Wed, 1 Oct 2008 11:01:18 GMT (80kb) Title: Deconstructing Baryon Acoustic Oscillations: A Comparison of Methods Authors: Anais Rassat, Adam Amara, Luca Amendola, Francisco J. Castander, Thomas Kitching, Martin Kunz, Alexandre Refregier, Yun Wang, Jochen Weller egories: astro-ph Comments: Submitted to …

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A17-030: Self Regenerative Coatings for Enhanced Protection of Silicon Based Ceramic Composites in Particle Laden Degraded Engine Environments A17-031: High-Fidelity Design Tools and Technologies for High-Pressure Heavy Fuel Injectors A17-032

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were measured in the laboratories of the University of Extremadura and CIEMAT with PIPS (passivated implanted planar silicon) detectors with active areas of 450 mm 2 . Determination of the age by the U–Th method is based on the Th growth from the decay of 2 3 4 U and 2 3 8 U isotope parents in samples not containing 2 3 0 Th at their initial formation.

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40,000 more dramatic 83.5-carat Star of South Africa diamond two years later. [Animation 4: For readers of the A curious crystal chemical aspect related to silicon carbide is the apparent absence click the image for an animation of the iron

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